| 학회 |
한국고분자학회 |
| 학술대회 |
2013년 가을 (10/11 ~ 10/12, 창원컨벤션센터) |
| 권호 |
38권 2호 |
| 발표분야 |
분자전자 부문위원회 |
| 제목 |
Controllable Doping of CVD Graphene Using Graphene Oxide |
| 초록 |
In this research, we report the controllable doping of CVD-grown graphene using the two-dimensional, solution processable graphene oxide (GO) nanosheets. GO can be utilized as a p-type dopant of CVD graphene because it contains electron withdrawing groups (such as hydroxyl, epoxy, carbonyl, and carboxyl groups). The electron-withdrawing groups of GO nanosheets that exhibit charge-transfer interactions with CVD graphene can contribute to tailoring the electronic structures of CVD graphene. The results showed that the work function of CVD graphene can be controlled by changing the coverage of GO onto the graphene, the degree of oxidation and reduction of GO nanosheets, confirmed by microscopic and spectroscopic results. Furthermore, the work function of graphene can be further increased by additional functionalization of GO nanosheets. Finally, we fabricated high-performance organic field-effect transistors using GO/Graphene electrode and demonstrated their electrical properties. |
| 저자 |
김해나1, 김현호1, 한중탁2, 장정인2, 이건웅2, 조길원1
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| 소속 |
1포항공과대, 2한국전기(연) |
| 키워드 |
graphene oxide; CVD graphene; doping; solution process
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| E-Mail |
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