| 학회 | 한국재료학회 |
| 학술대회 | 2010년 봄 (05/13 ~ 05/14, 삼척 팰리스 호텔) |
| 권호 | 16권 1호 |
| 발표분야 | B. Nanomaterials Technology (나노소재기술) |
| 제목 | 용액 공정 금속 산화물 반도체 박막 트랜지스터에 적용한 잉크젯 프린팅 구리 S/D 전극 |
| 초록 | Thin film transistors (TFTs) based on amorphous oxide semiconductors (AOSs) have attracted considerable attention due to their superior device performance when compared with conventional silicon-based TFTs. For this reason, the metal oxide semiconductor such as ZnO, InZnO and ZnSnO has been extensively developed to apply to active channel in TFTs by both vacuum deposition and solution-processed deposition. However, the understanding of the contact interface between source/drain electrodes and metal oxide semiconductor channel lacks much interest, but although it is essential for the practical application. In this study, we describe the first accommodation of the copper nanoparticle inks as low-cost, printable electrodes in the fabrication of AOS TFTs, and their impact on the resulting device performance. The source/drain copper electrodes in the top-contact configuration are ink-jet printed by using two different inks containing copper nanoparticles capped with PVP of different molecular weights (Mw = 10000 and 40000 gmol-1). In addition, TFTs with the printed copper electrodes annealed with different heat-treatment temperatures (200, 300 and 400°C) were fabricated and their characteristics were related to the change of electronic and chemical surface structures. It was observed that the surface chemical structure of the printed electrodes can be modified by varying the molecular weight of PVP and annealing temperature. By this surface modification of copper nanoparticles, interface dipole becomes weak at the copper surface and thus the work function of the printed electrodes decreases. The tunable work function as the capping molecule and annealing temperature is capable to form a better energetic leveling with metal oxide semiconductor layer, so that the energy barrier for electron injection at the metal/semiconductor interface will be lowered and the device performance improved. Therefore, we should carefully design the capping molecule for the metal nanoparticles used as source/drain electrodes of metal oxide semiconductor and the process condition such as the heat-treatment temperatures. Our findings allow us to dramatically reduce the cost for fabricating the electronic devices by enabling to use inexpensive conductive metals such as copper for solution-processed electrodes. |
| 저자 | 우규희, 정영민, 송근규, 전태환, 김영우, 김아름, 문주호 |
| 소속 | 연세대 |
| 키워드 | copper nanoparticles; inkjet printing; contact interface; metal oxide semiconductor; solution processed thin film transistor |
