| 학회 |
한국재료학회 |
| 학술대회 |
2008년 가을 (11/07 ~ 11/07, 차세대융합기술연구원) |
| 권호 |
14권 2호 |
| 발표분야 |
반도체재료 |
| 제목 |
The effects of the microstructure of ZnO films on their thin film transistors |
| 초록 |
This study examined a fundamental aspect of ZnO-based TFTs: the connection between the deposition conditions for the ZnO films, the microstructure and the electrical performance of the TFTs. We characterized the microstructure of ZnO films deposited under various RF powers by using high resolution transmission electron microscopy (HRTEM) and X-ray diffraction (XRD). In further investigating the effects of the microstructure on the device performance, we experimentally demonstrated that the electrical mobility of the devices was coupled to the grain size of the ZnO films in an exponential function. This sensitive dependence of the mobility on the grain size implicates the difficulties of fabricating ZnO-TFTs with uniform properties on a wide area. |
| 저자 |
전하석1, 박경2, 김형섭2, 이후정2
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| 소속 |
1성균관대 신소재공학부, 2성균관대 신소재 |
| 키워드 |
ZnO; TFT; grain size; RF sputtering; mobility
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| E-Mail |
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