| 초록 |
We utilized the water-free transfer technique to fabricate flexible graphene transistors with nanometer-scale aluminum oxide as the gate dielectric. The flexible transistors operated at a supply voltage of only 4 V with an average Dirac voltage of 0.38 (±0.22) V and exhibited a high field-effect mobility of 2,575 (±278) and 3,075 (±193) cm2/V∙s for holes and electrons, respectively. Furthermore, the polymeric layers used in the graphene transfer efficiently protected graphene against detrimental ambient species such as water; therefore, the high performance of the graphene transistors was maintained more than 130 days in ambient air. |
