| 학회 | 한국고분자학회 |
| 학술대회 | 2002년 가을 (10/11 ~ 10/12, 군산대학교) |
| 권호 | 27권 2호, p.280 |
| 발표분야 | 고분자 구조 및 물성 |
| 제목 | Ordered Pattern Formation and Magenetic Metal Impregnation in PS-b-PMMA Thin Films by Using Selective Etching |
| 초록 | 최대근, 권기영, 정종률*, 정희태, 신성철*, 양승만 한국과학기술원 생명화학공학과 한국과학기술원 물리과* Block copolymers consist of two or more chemically distinct polymer fragments, or blocks, covalently bonded together to form a larger, more complex macromolecule. If the constituent polymers are immiscible, phase separation is induced on a scale that is directly related to the size of the copolymer chains, which results in morphologies typically by a pattern of chemically distinct domains of periodicity L0 in the 10–100nm range. Thin films of block copolymers are useful for many applications, for examples, as surfactants or adhesives. Recently, the use of block copolymer thin films was explored for applications as templates for nanolithography. A variety of new patterning technologies (E-beam lithography, aluminum anodic etching, block copolymer self-assembly) have emerged, which attempts to create nanosclae structures over large areas at low cost. In these methods, self-assembly of diblock copolymers has advantages in the size control and low cost compared with other methods. In this work, we prepared ordered patterns in thin films of PS-b-PMMA by using selective etching. Magnetic metals for memory device application, such as, Co, Fe, Ni, Pt, Cr, and their alloys, are impregnated as isolated state in these patterns. |
| 저자 | 최대근, 양승만 |
| 소속 | 한국과학기술원 생명화학공학과 |
| 키워드 | O |
