| 초록 |
Many researchers have been intensively interested of CIS family thin films, including CuInSe2, CuInGaSe2, CuInS2, CuGaSe2, and Cu(In,Ga) (S,Se)2, with a high absorption coefficient, variable optical bandgap and high conversion efficiency. There are several method for fabrication CIS thin film solar cells such as evaporation, sputtering and non-vacuum method. Among them, sputtering method is known as high feasibility method for industrialization. For this reason, we have developed CIS family thin film solar cells and prepared multi-layered precursors by sputtering method. There are two approaches in crystallization of multi-layered precursors. One is the conventional rapid thermal process (RTP) with continuous supply of selenium (Se) and another is electron beam irradiation (EBI) method as a new method without supply of Se. EBI, irradiated to samples by controlling electron dose and intensity, can be a potential method for crystallization of Cu-In-Ga-Se precursors. The optical, structural, compositional properties of RTP and EBI samples are investigated for higher efficiency. The more detailed information is reviewed and discussed in the upcoming conference. |
