| 학회 |
한국고분자학회 |
| 학술대회 |
2014년 가을 (10/06 ~ 10/08, 제주 ICC) |
| 권호 |
39권 2호 |
| 발표분야 |
기능성 고분자 |
| 제목 |
Synthesis and Characteristics of Solution Processable Organic-Inorganic Hybrid High-k Materials for Gate Dielectric in the TFTs |
| 초록 |
Solution-processable organic-inorganic hybrid materials were synthesized by the sol-gel method of photopatternable silane and transition metal alkoxides for thin film transistors (TFTs) at room temperature. Using a controlled chemical reactivity of metal alkoxides to hydrolysis and condensation, the synthesized hybrid materials had a high transmittance of over 90 % in the visible region. Addition of transition metal alkoxide was improved the dielectric constant compared with the conventional silicon oxide film (k ~ 3.9) and adjustment of Zr/Si molar ratios exhibited better dielectric constant from 4.2 to 4.7 at 1 MHz. The leakage current density reduced 5.5 nA/cm2, by minimizing silanol groups into the synthesized hybrid materials. Consequently, hybrid materials with a high dielectric constant and low hydroxyl groups can be utilized as the gate dielectric in the TFTs. |
| 저자 |
조경천, 김미애, 김진백
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| 소속 |
한국과학기술원 |
| 키워드 |
Hybrid gate dielectric; High dielectric constant (high-k); Sol-gel method; Thin film transistors; solution process
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| E-Mail |
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