| 학회 |
한국공업화학회 |
| 학술대회 |
2011년 가을 (11/02 ~ 11/04, 경원대학교) |
| 권호 |
15권 2호 |
| 발표분야 |
화학공정 |
| 제목 |
A Convenient Dry Etching Technology for Fabrication of High Aspect Ratio Structure Using HF/H2O in Supercritical CO2 |
| 초록 |
We studied an improved dry etching method consisting of HF/H2O system in supercritical CO2 applied for stiction free microstructures. The etching rates of boron phosphor silicate glass (BPSG) and tetraethoxyortho silicate (TEOS) were observed to be several times higher than those of wet etching counterparts. The reproducibility of the method was improved by employing helium as the purge gas after the dry etching to control the etching time. The activation energies of the dry etching reaction of TEOS and BPSG were calculated to be 17.8 and 6.87 kcal/mol, respectively. |
| 저자 |
김도훈, 조범활, 임권택
|
| 소속 |
부경대 |
| 키워드 |
Etching; Supercritical carbon dioxide; MEMS; Sacrificial oxide; Poly-Si; Cantilever; Helium gas
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| E-Mail |
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