| 학회 |
한국고분자학회 |
| 학술대회 |
2008년 봄 (04/10 ~ 04/11, 컨벤션 뷰로(대전)) |
| 권호 |
33권 1호 |
| 발표분야 |
고분자 구조 및 물성 |
| 제목 |
Characterization of Electrical Reliability of Ultralow Dielectric Materials |
| 초록 |
Nanoporous materials have gained much attention as ultralow dielectric materials because the continual increase in device and wiring densities in integrated circuits leads to the remarkable increase in RC delay. In order to decrease the dielectric constant, nanopores are introduced into dielectric materials, of which mechanical strength and electrical reliability were drastically reduced. Therefore, in order to characterize electrical reliability of the nanoporous SOGs, we applied voltage ramping dielectric breakdown test. The copolymer of methyl trimethoxysilane with bis-1,2-triethoxysilyl ethane was used as an organosilicate matrix and two types of reactive porogens were used. The first porogen was trimethoxysilyl cyclodextrin (TMSCD) which left a small amount of ash and another was trimethoxysilyl xylitol (TMSXT) which did not leave any residue. Comparative study with Cu and Ta electrodes showed that pores and carbon ash could act as electrical defects with the increasing porosity. |
| 저자 |
이용준1, 최현상1, 신보라1, 민성규2, 윤도영3, 주영창3, 이희우1
|
| 소속 |
1서강대, 2하이닉스 반도체, 3서울대 |
| 키워드 |
porogen; Reliability; vrdb; dielectric
|
| E-Mail |
|
