| 학회 | 한국재료학회 |
| 학술대회 | 2017년 봄 (05/17 ~ 05/19, 목포 현대호텔) |
| 권호 | 23권 1호 |
| 발표분야 | A. 전자/반도체 재료 분과 |
| 제목 | Retention and Endurance characteristics of TaOx ReRAM with multi-level switching |
| 초록 | As one of future non-volatile memories, resistive switching memories (ReRAM) have been expected to replace current NAND flash memory based on charge trapping, due to minimal device structure of two-terminals. TaOx is one of the prospective switching materials because of two stable phases of TaO2 and Ta2O5, which can also control the stable resistance state, long program/erase endurance and data retention at high temperature under low-current operation. In this study, the role of TaOx on the multi-level behavior will be disclosed in terms of endurance and reliability characteristics. |
| 저자 | 차익수1, 주병권1, 주현수2 |
| 소속 | 1고려대, 2한국과학기술(연) |
| 키워드 | ReRAM; TaO<SUB>x</SUB> |
