| 학회 |
한국고분자학회 |
| 학술대회 |
2010년 봄 (04/08 ~ 04/09, 대전컨벤션센터) |
| 권호 |
35권 1호 |
| 발표분야 |
분자전자 소재 및 소자(분자전자 부문위원회) |
| 제목 |
Bias Stress Effects in Polymer Thin-Film Transistors |
| 초록 |
We have investigated the bias stress effect on polymer thin-film transistors. The threshold voltage (VT) shift induced by DC bias stress has been analyzed for different gate-source and drain-source voltages. By fitting the time versus VT shift to a stretched exponential function, the characteristic charge trapping time constant of the VT shift were determined for each condition. We also observed that the VT shift due to charge trapping can be recovered by halting the device for several hours. The recovery rate from DC OFF bias stress is slightly slower than the recovery from DC ON bias stress. The difference in the recovery rates between ON and OFF may be attributed to the different charge releasing time of the deep trap state for hole and electron. |
| 저자 |
이지열1, 김도환2, 유병욱1, 이방린2, 박정일1, 김주영2, 문현식1, 구본원2, 진용완1, 이상윤2
|
| 소속 |
1삼성 종합기술원, 2Display Lab. |
| 키워드 |
Organic thin-film transistor; Bias stability; solution process
|
| E-Mail |
|
