| 학회 | 한국재료학회 |
| 학술대회 | 2009년 봄 (05/21 ~ 05/22, 무주리조트) |
| 권호 | 15권 1호 |
| 발표분야 | 에너지환경재료 |
| 제목 | Effect of the Cu underlayer on the properties of ITO/Cu films |
| 초록 | Sn doped indium oxide (ITO) single-layer films and ITO/Copper (Cu) bi-layer films were prepared on polycarbonate substrates by DC and RF magnetron sputtering without intentional substrate heating. In order to consider the influence of the Cu bottom layer on the optoelectrical properties and microstructure of the films, the thickness of the Cu bottom layer in the ITO/Cu films was varied from 5 to 20 nm. Conventional ITO films had constant optical transmittance of 74% and an electrical resistivity of 3.1X10-3 cm, while ITO/Cu films had different optoelectrical properties that were influenced by the thickness of the Cu bottom layer. The lowest electrical resistivity, 5.7X10-5 cm, was obtained from ITO 80 nm/Cu 20 nm films and the highest optical transmittance of 72%, was obtained from the ITO 95 nm/Cu 5 nm films. From the figure of merit, it can be concluded that the most effective Cu thickness in the ITO/Cu films on the optoelectrical properties was 5 nm. |
| 저자 | 김대일, 채주현, 양종우 |
| 소속 | 울산대 |
| 키워드 | ITO; Cu; resistivity; transmittance |
