| 학회 | 한국화학공학회 |
| 학술대회 | 2002년 봄 (04/26 ~ 04/27, 강원대학교) |
| 권호 | 8권 1호, p.2109 |
| 발표분야 | 재료 |
| 제목 | InGaN/GaN 다층양자우물 LED구조의 Cl2/Ar ICP 식각 |
| 초록 | A parametric study of the etch characteristics of InGaN/GaN multiple quantum well (MQW) light emitting diode (LED) structures has been carried out with Cl2/Ar in an inductively coupled plasma discharge. At higher pressures (> 10 mTorr) reactive chlorine ions played more important role than neutral chlorine and inert argon ion. The etch rate increased up to 60 % Cl2 and remained relatively constant at higher Cl2 percentages, but increased monotonically with the ICP source and rf chuck powers. The attainable etch rate of the InGaN/GaN MQW structures was about 4,500 /min at a moderate ICP condition: 700 W ICP source power, 100 W chuck power, 10 mTorr, and 50 % Cl2. The experimental results overall showed that the dominant etch mechanism of the ICP etching of the InGaN/GaN MQW LED structures is an energetic ion-enhanced chemical etching. |
| 저자 | 박형조1, 최창선2, 최락준, 홍주형, 한윤봉 |
| 소속 | 1전북대, 2화학공학부 |
| 키워드 | Multiple quantum well; InGaN/GaN; Light-emitting diode; ICP etching |
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| 원문파일 | 초록 보기 |
