| 학회 |
한국화학공학회 |
| 학술대회 |
2002년 가을 (10/24 ~ 10/26, 서울대학교) |
| 권호 |
8권 2호, p.5286 |
| 발표분야 |
재료 |
| 제목 |
InGaN/GaN 다중 양자우물 발광 다이오드의 플라즈마 식각 손상 특성 |
| 초록 |
The physical degradation of the sidewall along with the rougher surface morphology deteriorated the forward and reverse voltages at higher dc biases (above - 180 V). The sidewall contamination by etch products on the active layer induced a severe degradation of the breakdown voltage. The reverse voltage was relatively insensitive to the pressure effect. The experimental results led to a conclusion that the forward turn-on voltage is more sensitive to the surface roughness and the reverse breakdown voltage is strongly affected by the sidewall contamination. |
| 저자 |
최락준, 최창선, 박형조, 한윤봉
|
| 소속 |
전북대 |
| 키워드 |
Plasma-Induced Etch Damage; I-V properties; InGaN/GaN QW LEDs; LED fabrication
|
| E-Mail |
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| 원문파일 |
초록 보기 |
