화학공학소재연구정보센터
학회 한국화학공학회
학술대회 2007년 봄 (04/19 ~ 04/20, 울산 롯데호텔)
권호 13권 1호, p.1028
발표분야 재료
제목 Diffusion of Mo/W in silicon at high temperature
초록 As one of the renewable energy, polycrystalline solar cell is the alternative plan to solve the energy problem. There is heating process to grow crystal of silicon in the process which makes ingot. However, increasing temperature of silicon core rod wasted much electric power. So we performed an experiment to substitute some kind of metal for silicon. In this work, tungsten and molybdenum were selected as a substitute for silicon because of a high melting point as well as a low thermal-expansion coefficient of them. Tungsten and molybdenum films were deposited on silicon substrate by sputtering under the low pressure at 100℃. And then the prepared samples were annealed at various temperatures between 600 to 1000℃. X-ray diffractometer(XRD), scanning electron microscopy(SEM), transmission electron microscopy(TEM) and auger electron spectroscopy (AES) were employed to study the microstructure and the morphology.
저자 최준명, 송이화, 박승빈
소속 한국과학기술원
키워드 Diffusion; Sputter
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