| 학회 | 한국화학공학회 |
| 학술대회 | 2009년 봄 (04/23 ~ 04/24, 광주 김대중컨벤션센터) |
| 권호 | 15권 1호, p.889 |
| 발표분야 | 재료 |
| 제목 | Diffusion coefficients of tungsten and molybdenum at high temperature |
| 초록 | The increasing demand for the polysilicon used for the fabrication of solar cells requires many countries to produce it for themselves. In Siemens reactor, the trichlorosilane gas reacts with the hydrogen gas and the polysilicon is deposited on the silicon core rod throughout the CVD reaction. However the specific resistance of the silicon is so high that preheating of the core rod is required. Therefore the metal core rod and the diffusion barrier were tested in our previous research. In this report, we deposited the tungsten nitride diffusion barrier layer and the tungsten or molybdenum metal on the silicon wafer by using co-sputtering. In order to investigate the thermal stability of the diffusion barrier at high temperature, the samples annealed at the various temperatures were analyzed by SEM and AES. The sheet resistance and the XRD analysis were performed to observe the crystallization as the temperature was increased. From the TEM-EDS, the diffusion coefficients of tungsten and molybdenum were calculated by single diffusion model. |
| 저자 | 오영준1, 송이화1, 최준명2, 김희영3, 박승빈1 |
| 소속 | 1KAIST, 2삼성엔지니어링, 3한국화학(연) |
| 키워드 | Polysilicon; solar cell; diffusion barrier; diffusion coefficient |
| 원문파일 | 초록 보기 |
