| 학회 | 한국재료학회 |
| 학술대회 | 2016년 가을 (11/16 ~ 11/18, 경주 현대호텔) |
| 권호 | 22권 2호 |
| 발표분야 | A. 전자/반도체 재료 분과 |
| 제목 | Study of etching rate according to the type of oxidizers and concentration of each oxidizer in tungsten CMP |
| 초록 | Nowadays, semiconductor devices have reached the high-integrated and high-speed level. Lithography and planarization technologies that form micro-patterns contribute to this technological development. Especially, CMP(Chemical Mechanical Polishing), which assures the flatness in wafers and chip dies for securing a margin of DOF(Depth of Focus), represents the planarization technology. CMP fabrication is a complex process that undergoes various conditions such as the fabrication environment including a pressure, relative speed, and a quantity of slurry and the equipments including a pad, a slurry, and a polishing equipment. In case of slurry, its chemical elements vary with the type of material to be polished such as SiO2 insulator, the vertical interconnection material of W, the horizontal wiring material of Cu. These chemical elements facilitate the surface planarization effectively. However, over-polishing and excessive change on surface can occur due to improper concentration of chemicals and type of chemicals. Therefore, control of them is important. In this paper, the etching thickness of wafer is observed through 4-point probe for every concentration of each oxidizer(H2O2, Fe(NO3)3, KMnO4), which is important for an effective removal of the W wafer, hanged by 0.05%(0 to 0.2%) during 5 minutes. Through the results of the experiment, the etching rates are calculated and the effect of PAM, the corrosion inhibitor, is observed. Furthermore, SEM images are also measured to check the change on the W wafer surface according to the effect of PAM for each oxidizer. Through these procedures, we become able to control appropriate etching rates by using a proper type of oxidizer of the moderate concentration and a suitable corrosion inhibitor in W CMP fabrication. * This work was supported by the Brain Korea 21 PLUS Program in 2016. |
| 저자 | 최지호, 김동협, 정기쁨, 박재근 |
| 소속 | 한양대 |
| 키워드 | <P>tungsten CMP; Etching rate</P> |
