| 초록 |
A flexible ambipolar thin-film transistor (TFT) was developed that consisted of a pentacene layer and a ZnO layer modified with a dodecanoic acid self-assembled monolayer on a flexible polyarylate substrate. The TFT exhibited balanced hole and electron mobilities of 0.3 and 0.2 cm2V-1s-1 and showed flexible thin-film characteristics. Additionally, because the anodized Al2O3 dielectric layer is a high κ material compared with a normal SiO2 dielectric layer, the flexible ambipolar TFT was able to operate at a low voltage of 5 V. |
