| 학회 |
한국재료학회 |
| 학술대회 |
2014년 봄 (05/15 ~ 05/16, 창원컨벤션센터) |
| 권호 |
20권 1호 |
| 발표분야 |
A. 전자/반도체 재료(Electronic and Semiconductor Materials) |
| 제목 |
Self-forming Ti oxide barrier for nanoscale Cu interconnects created by hybrid atomic layer deposition (ALD) of Cu-Ti alloy |
| 초록 |
We synthesized a Cu-Ti alloy by employing alternating atomic layer deposition (ALD) surface reactions using Cu and Ti precursors, respectively. By alternating between these two ALD surface chemistries, we fabricated ALD Cu-Ti alloy. Cu was deposited using (Hexafloroaceticaceto)(Tertiary-buteno)copper (hfac(Cu)DMB) as a precursor and H2 plasma, while Ti was deposited using tetrakis(dimethylamino)titanium (TDMAT) as the precursor and H2 plasma. The ti atomic percent in the Cu-Al alloy films varied from 0 at.% to 15.2 at.%. Transmission electron microscopy revealed that a uniform Ti-based interlayer self-formed at the interface after annealing. To evaluate the barrier properties of the Ti-based interlayer and adhesion between the Cu-Ti alloy film and SiO2 dielectric, thermal stability and peel-off adhesion tests were performed, respectively. The Ti-based interlayer showed similar thermal stability and adhesion to the reference Mn-based interlayer. Our results indicate that Cu-Ti alloys formed by alternating ALD are suitable seed layer materials for Cu interconnects. |
| 저자 |
박재형, 한동석, 강민수, 박종완
|
| 소속 |
한양대 |
| 키워드 |
Cu-Ti alloy; atomic layer deposition; self-forming barrier; Cu diffusion barrier
|
| E-Mail |
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