| 초록 |
Diamond-like carbon deposition was processed by using Low Frequency Plasma Enhanced Chemical Vapor Deposition. The process precursor was benzene and the carrier gas was argon. A liquid flow meter was used to control the benzene flow rate and it was fixed at 0.8 g/h. The process variables were LF power and the argon carrier flow rate. The substrates were glass, silicon wafer and stainless steel. The plasma discharge was analyzed with digital oscilloscope, optical emission spectroscopy in-situ. A buffer layer of 100 nm amorphous Si was deposited before the DLC coating. The DLC deposition rate was about 50 nm/min at 100 W LF power and 75 mTorr process pressure. The frequency of the LF power was 53 kHz at 100 W power, 20 sccm Ar flow rate, and 76 mTorr. Hardness of the deposited DLC film was about 8.77 GPa at 100 W LF power. More results will be presented at the meeting |
