| 학회 | 한국재료학회 |
| 학술대회 | 2016년 가을 (11/16 ~ 11/18, 경주 현대호텔) |
| 권호 | 22권 2호 |
| 발표분야 | G. 나노/박막 재료 분과 |
| 제목 | Low-Temperature Growth of Indium Oxide Thin Film by PEALD using Novel Indium Precursor for High-Mobility Thin Film Transistor Application |
| 초록 | For super high-vision and large area display technology, the development of high mobility thin film transistor (TFT) with field effect mobility (μFE) as high as ~30 cm2/V∙s is of importance. For satisfying this requirement, indium-containing oxide thin films such as In2O3, InZnOx, InSnOx, and InGaZnOx have intensively been investigated as candidates for active layer because the large overlap of In 5s orbital can provide the facile electron transport path, which is attributed to low electron effective mass. In this study, growth of high quality In2O3 films were demonstrated using plasma-enhanced atomic layer deposition (PEALD) at deposition temperatures of 70-250 ℃ using novel In precursor and O2 plasma for fabrication of high mobility thin film transistor. Self-limiting In2O3 PEALD growth was obtained with saturated growth rate of ~0.053 nm/cycle at ALD temperature regime of 90-220 ℃. As-deposited In2O3 PEALD films showed excellent film properties in aspects of residual impurity level, film density, surface morphology, and electrical properties. Single In2O3 channel based thin film transistors (TFTs) were fabricated in coplanar bottom gate structure and their electrical properties were evaluated. Due to excellent quality of In2O3 PEALD layers, superior electronic switching and transferring performances were achieved with high field effect mobilities of 29 and 18 cm2/V∙s at the linear and saturation regime, respectively. |
| 저자 | 김효연1, 정은애2, 문금비3, 박상희2, 박진성4, 전동주4, 정택모1, 한정환2 |
| 소속 | 1한양대, 2한국화학(연), 3성균관대, 4카이스트 신소재공학과 |
| 키워드 | Novel Indium Precursor; High-Mobility Thin Film Transistor Application; Low-Temperature Plasma-Enhanced Atomic Layer Deposition |
