| 초록 |
Broadband spectral detection capability, from ultraviolet to infrared, is a technological challenge for sensing materials being developed for high-performance photodetection. In this work, we stacked tellurium oxide (TeOx) and InGaSnO (IGTO) into a heterostructure at the low temperature of 150 ℃ to enhance the spectral absorption profile. The superior photoelectric characteristics benefit from the intrinsic optical absorption range (300–1500 nm) of the hexagonal tellurium (Te) phase in the TeOx film, and photoinduced electrons are driven effectively by band alignment at the TeOx/IGTO interface under illumination. modest detection properties (responsivity ~91 A/W, detectivity ~2x1011 jones) for infrared irradiation at 970 nm demonstrate that this heterostructure can be adapted as a broadband photodetector. Furthermore, its low-temperature processability suggests that our proposed concept might be used to design array optoelectronic devices for wideband detection with high sensitivity, flexibility, and stability. |
