| 학회 |
한국고분자학회 |
| 학술대회 |
2012년 봄 (04/12 ~ 04/13, 대전컨벤션센터) |
| 권호 |
37권 1호 |
| 발표분야 |
분자전자 부문위원회 |
| 제목 |
Highly Conductive, Reduced, and N-doped Graphene Electrodes for Polymer Light Emitting Diodes |
| 초록 |
We introduce an effective process to fabricate highly conducting, reduced, and N-doped graphene films on a glass substrate. Highly conductive and transparent reduced graphene electrodes were prepared by sequential reduction and nitrogen doping processes typified with chemical and thermal treatment after spin coating with an aqueous dispersion of graphene oxide. Moreover, the work-function of the resultant N-doped graphene electrodes could be controlled by N-doping contents divided by experimental conditions. In this approach, we demonstrate tailored transparent graphene electrodes by reducing and N-doping environment and also introduce for the first time inverted-type polymer light emitting diodes (iPLEDs) exhibiting the possibility for the commercialization as one of the practical applications using graphene electrodes. |
| 저자 |
황진옥1, 최동성2, 김주영1, 이경은2, 김상욱1
|
| 소속 |
1KAIST, 2MSE |
| 키워드 |
N-doped Graphene Electrode; Polymer Light Emitting Diodes(PLEDs); Work-function
|
| E-Mail |
|
