| 초록 |
Previous research efforts have paid little attention to reduced graphene, which can be of great benefit due to low-cost solution processing without substrate transfer. Here we demonstrate workfunction-tunable, N-doped reduced graphene film, which is obtainable from the spin-casting of graphene oxide dispersion and can be successfully employed as a transparent cathode for high-performance PLED. The sheet resistance of N-doped reduced graphene attained 300 Ω/0 at 80% transmittance. The optimal doping of quaternary nitrogen and the effective removal of oxygen functionalities via sequential hydrazine treatment and thermal reduction accomplished the low resistance. The PLEDs employing N-doped reduced graphene cathodes exhibited a maximum electroluminescence efficiency higher than those of FTO-based devices. The reduced barrier for electron injection from a workfunction-tunable, N-doped reduced graphene cathode offered this remarkable device performance. |
