| 초록 |
MXene(Transition Metal Carbide or Nitride) is recently discovered 2-dimension materials, get attention for various field because of Mxene’s material properties. Furthermore, not only Mxenes material properties for 2-dimension material but also high electrical conductivity of MXene, there are progressing various research for electrochemical fields. But it is not enough for research result about MXene’s fundamental material properties. Therefore, We fabricated MXene based Field Effect Transistor(FET). Using of this FET, We will going to measure and analyze MXene’s electrical properties and search for direction that can be applied as various fields or devices. Ultimately, We will going to search for effective availability about MXene-based FET by using MXene’s electrical properties. If MXene’s excellent electrical conductivity can be applied with Field effect transistor, it is expected that it will be possible to fabricate a FET with very excellent device characteristics. |
