| 학회 | 한국재료학회 |
| 학술대회 | 2017년 봄 (05/17 ~ 05/19, 목포 현대호텔) |
| 권호 | 23권 1호 |
| 발표분야 | G. 나노/박막 재료 분과 |
| 제목 | Synthesis of Two-Dimensional Molybdenum Disulfide using Molybdenum Fluoride precursor and formation of 2D heterostructure |
| 초록 | Recently, the research of atomically thin two dimensional (2D) heterostructures has attracted increased interest. These heterostructures have opened the possibilities for optoelectronics and electrical properties beyond the unique properties of each layered materials. Especially, MoS2/graphene heterostructure is expected due to the extremely high mobility of graphene and high optical absorption of MoS2. The mechanical exfoliation is one of the most common method to assemble a 2D heterostructure. However, this method has the disadvantage of producing small flake sizes. Also, it is easy to suffer from the defects or impurities on the interface. These problems have a negative effect on the properties of the heterostructures. Therefore, well established method for MoS2/graphene heterostructure with uniform films, high optical and electrical properties is essential. In this study, we present a direct growth of layer controlled MoS2 on graphene using ALD process for the MoS2/graphene heterostructure. We obtained uniform and centimeter scale MoS2 films on graphene by alternating exposure of molybdenum fluoride (MoF6) and hydrogen disulfide (H2S) vapors. We utilize atomic force microscopy(AFM), Raman spectroscopy, transmission electron microscopy(TEM), X-ray photoelectron spectroscopy(XPS), and photocurrent measurements to evaluate the direct growth of MoS2/graphene heterostructure properties. |
| 저자 | 김영준, 최대근, 우황제, 박주상, 김형준 |
| 소속 | 연세대 |
| 키워드 | MoS2/Graphene; 2D Heterostructure; Atomic Layer Deposition(ALD) |
