| 초록 |
Semiconductor nanowire field effect transistors (NWFETs) have been interested in the sensor field as a promising platform for chemical and biological sensors. Despite their potential applications, this technology has been limited to only academic researches due to the absence of the cost-effective and highly reliable fabrication routes. To make matters worse, lack of understanding on sensing mechanism is regarded as one of bottleneck for wide range of applications. To address these issues, we proposed a novel fabrication method based on nano-imprinting technology and plasma etching process. Based on this approach, various nanowire devices with different cross-sectional shape can be formed easily by controlling fabrication conditions. In this work, we performed the 3D device simulation to understand the sensing performance of nanowire devices with different cross-sectional shape in terms of the detailed electrochemical phenomena during highly and selective detections of chemical and biological moiety. We believe that this work will resonate with chemical and biological sensor field. |
