학회 |
한국고분자학회 |
학술대회 |
2008년 봄 (04/10 ~ 04/11, 컨벤션 뷰로(대전)) |
권호 |
33권 1호 |
발표분야 |
유기반도체 재료 및 소자 |
제목 |
Dependence of Ferroelectric Characteristics on Varying Memory Device Architectures based on P(VDF/TrFE)(72/28) Copolymer Thin Films |
초록 |
P(VDF/TrFE)s are being widely used for non-volatile ferroelectric polymer memory devices. We focused our attention on studying the memory characteristics of P(VDF/TrFE) ultrathin films as a function of varying device architectures with emphasis on enhanced electrical stability and faster R/W/E capability. DC-EFM was effectively used to confirm the changes in dipole moments along the applied field direction and the resultant change phase image for 'ON or OFF' state. With MFIS type, the C-V curve shifted towards the negative side, whereas replacing the SiO2 with PVP layer prevented this shifting phenomenon, which enabled the written data to be distinguished even at 0V. OFET using pentacene as an active material was effectively used for reading the Ion/Ioff ratio between S/D electrodes. The results are reported in detail here. The authors would like to thank the Korea Science and Engineering Foundation (KOSEF) for sponsoring this research through the SRC/ERC Program of MOST/KOSEF. |
저자 |
김유민, 최창우, A. Anand Prabu, 윤선, 김갑진
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소속 |
경희대 |
키워드 |
Ferroelectric polymer memory; P(VDF/TrFE); MFM; MFIS; OFET
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E-Mail |
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