| 학회 | 한국재료학회 |
| 학술대회 | 2007년 가을 (11/02 ~ 11/02, 성균관대학교) |
| 권호 | 13권 2호 |
| 발표분야 | 반도체재료 |
| 제목 | In-situ FT-IR diagnostics for monitoring of the aluminum chemical vapor deposition |
| 초록 | FT-IR spectroscopy was used to monitor a precursor supplied to reactor, which ensured the reliability of precursor delivery by the bubbling method. For the reaction analysis of a metal-organic precursor in CVD process, reactor with uniform temperature has proved to be an effective tool. The use of FT-IR enabled the estimation of aluminum precursor concentration and reaction yield, which ensured the accuracy of analysis. Information on the reaction products is one of the keys to understanding the reaction pathways and the overall stoichiometry of the reaction. The effective combination of FT-IR monitoring systems and CVD processes can be used to a construct a reaction data set for as CVD systems with much less time and effort. Aluminum films can be deposited by CVD from the aluminum borohydride triamine (BH4-AlH2-N(CH3)3) precursor under reduced pressure and relatively low temperature. A diagnostics of the CVD process is presented for the two systems on the basis of an FT-IR in-situ analysis of the gas phase. By adding a mass flow rate of precursor with carrier gas in outlet of the bubbler, the consumption of specific species is enhanced, revealing the effective precursors of the liquid phase. In order to better understand the mechanisms and Al-film formation, correlations are pointed out between the gas phase analysis, the deposition kinetics and the deposit physicochemical characteristics. In this experiment, the deposited Al-film is respectively obtained according to a different reaction from the aluminum precursor with and without transmutation. In this in-situ FT-IR monitoring system, two monitoring processes were compared to each other before and after transmuting for metal-organic precursor. In the result, the first one, occurring at a substrate temperature of 150 to 250oC, is changed to that involved the aluminum from the FT-IR spectrum into the region of 4000~400 cm-1. The second one, gradually prevailing with the increase of process time, is governed by the change of Al-H and B-H stretching peaks according to a heterogeneous reaction between fresh precursors and transmuted that. This process competes with and without the formation of amine-borane complex bands. |
| 저자 | 박영재1, 양재영2, 강상우2, 윤주영2, 성대진2, 신용현2 |
| 소속 | 1UST, 2한국표준과학(연) |
| 키워드 | In-situ FT-IR; aluminum; CVD; monitoring; thin film |
