| 초록 |
Triethylsilylethynyl anthradithiophene(TES-ADT) has been shown as a promising soluble semiconductor for the active layer of organic field effect transistors (OFETs) because of its solution processability, chemical stability and its electrical properties. Since the grain size within the active layer of OFETs has a strong influence on the device performances, a number of studies have been devoted to controlling the crystallization characteristics of TES-ADT thin films. In this study, by varying the time of mixing TES-ADT/toluene solution,we found that exposing the as- spun TES-ADT thin film to 1,2 – dichloroethane (DCE) solvent vapour, there was a significant decrease in grain size of the TES-ADT spherulites when increasing the mixing time. The FETs were fabricated to examine the effect of grain size on the electrical characteristics of the OFETs. The resulting devices with smaller grain size showed characteristics that are dramatically poorer than devices with larger grain size. |
