| 학회 |
한국재료학회 |
| 학술대회 |
2014년 가을 (11/27 ~ 11/28, 대전컨벤션센터) |
| 권호 |
20권 2호 |
| 발표분야 |
C. 에너지/환경 재료(Energy and Environmental Materials) |
| 제목 |
ZnSnO thin film growth by using atomic layer deposition and applying to buffer layer for CIGS solar cells |
| 초록 |
ZnSnO thin films were deposited by the Atomic layer deposition(ALD) process using diethyl zinc(DEZ) and Tetrakis-dimethylamino tin(TDMA-Sn) as metal precursors and water vapor as a reactant. In case of CIGS solar cell, CdS is the most popular buffer layer. However, CdS causes environmental problems since the heavy metal, Cd. In order to fabricating Eco-friendly solar cells, ZnSnO can become alternatives. The CIGS solar cells using ZnSnO buffer layer showed 16.48% conversion efficiency. This results can be comparable with conversion efficiency of CdS buffer layer(16.55%). |
| 저자 |
김선철, 권혁상, 안병태
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| 소속 |
한국과학기술원(KAIST) 신소재공학과 |
| 키워드 |
Cu(In; Ga)Se2 solar cell(Cu(In; Ga)Se2 태양전지); Atomic Layer deposition(원자층 증착법); Cd-free buffer layer(무카드뮴 완충층); ZnSnO buffer layer(ZnSnO 완충층)
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| E-Mail |
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