| 학회 |
한국고분자학회 |
| 학술대회 |
2018년 가을 (10/10 ~ 10/12, 경주컨벤션센터) |
| 권호 |
43권 2호 |
| 발표분야 |
분자전자 부문위원회 II |
| 제목 |
Incorporation of Interfacial Passivation Layer for Performance and Stability Enhancement in (FAPbI3)1-x:(MAPbBr3)x Perovskite Solar Cells |
| 초록 |
In recent years, perovskite solar cells (PSCs) have attained state-of-the-art efficiency comparable to that of silicon solar cells. To further enhance the power conversion efficiency (PCE) and air stability of PSCs, it is imperative to optimize the device architecture, surface and interfacial morphology and composition of the active perovskite layer. Herein, we demonstrate the use of methylammonium bromide (MABr) as a passivation layer on top of (FAPbI3)1-x:(MAPbBr3)x film surface to improve charge collection. Our findings show that the presence of MABr passivation layer has remarkably reduced the excessive PbI₂ phase, grain boundaries and surface defects of (FAPbI3)1-x:(MAPbBr3)x film. This facilitated the charge transfer in the device, resulting in ＞ 10% increment in the PCE of the device (17.1%). In overall, this work manifests the defect-passivation and charge facilitator roles of interfacial passivation layer on the rear surface of perovskite film. |
| 저자 |
BARKHA TYAGI1, 강재욱2, Hock Beng Lee2
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| 소속 |
1CHONBUK NATIONAL Univ., 2전북대 |
| 키워드 |
Perovskite Solar Cells; interfacial passivation layer
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| E-Mail |
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