| 학회 | 한국재료학회 |
| 학술대회 | 2019년 가을 (10/30 ~ 11/01, 삼척 쏠비치 호텔&리조트) |
| 권호 | 25권 2호 |
| 발표분야 | G. 나노/박막 재료 분과 |
| 제목 | Continuous Bandgap Engineering of Wafer-Scale Monolayer WS2xSe2(1-x) Alloys |
| 초록 | Transition metal dichalcogenides (TMDs) as a 2D semiconductor have recently attracted tremendous scientific and technological interests for emerging electronics and optoelectronics due to their exceptional properties and wide range bandgap energies. For practical applications in various functional devices, the scalable growth and bandgap engineering of TMD films are highly required. Here, we will present the wafer-scale growth of tungsten dichalcogenide films including WSe2 and WS2 using vertical metal-organic chemical vapor deposition (MOCVD). Homogeneous WSe2 and WS2 thin films were uniformly grown over a 2-inch SiO2/Si substrate, whose monolayer characteristics were confirmed by optical spectroscopic and structural analyses. Furthermore, we investigated the continuous bandgap tuning of tungsten dichalcogenide alloys by modulating the relative molar flow rate of sulfur and selenium precursors. The monolayer WS2xSe2(1-x) alloying films showed a sequential shift of bandgap energies and lattice vibration modes upon varying the composition of alloys in photoluminescence and Raman spectra. The bandgap engineering of 2D semiconductors demonstrated in this work would make an important step for their practical uses in next-generation ultrathin electronics and optoelectronics. |
| 저자 | 강희성, 구도형, 이철호 |
| 소속 | 고려대 |
| 키워드 | <P>Transition metal dichalcogenide; Alloy; MOCVD</P> |
