| 학회 |
한국고분자학회 |
| 학술대회 |
2011년 봄 (04/07 ~ 04/08, 대전컨벤션센터) |
| 권호 |
36권 1호 |
| 발표분야 |
분자전자용 소재 및 소자 |
| 제목 |
Gate bias stress effect in organic field effect transistors for various functional groups of dielectric layer. |
| 초록 |
Organic field effect transistors(OFETs) based on polymer and small molecules have attracted much attention in recent years. But trapped charges in semiconductor/dielectric interface affect device performances. The threshold-voltage shift is observed due to trapped charge under gate bias stress. In this study, we introduce dielectric surface having various functional groups to confrim the gate bias stress effects in OFETs. |
| 저자 |
김지예, 김세현, 박미정, 박선욱, 박찬언
|
| 소속 |
포항공과대 |
| 키워드 |
organic field effect transistor |
| E-Mail |
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