| 초록 |
Solution-processed polymer semiconductors are of great interest as a key material for the realization of lightweight, low-cost, and flexible electronic devices without using high-vacuum equipment. For the possible application of the solution-processed polymer semiconductors to real electronic products, reliable operation of the devices should be guaranteed. Here, we improved the operation stability of organic field-effect transistors (OFETs) consisting of solution-processed polymer semiconductor/insulator blends. Fluorinated polymer was effectively employed in the polymer semiconductor/insulator blends, which allowed the blend films to have a high energetic barrier to hole trapping from semiconductor nanowires to insulator matrix. Owing to this high energetic barrier at semiconductor/insulator interface, the resulting OFETs exhibited almost hysteresis-free transfer and output characteristics and reliable operation under a sustained gate-bias stress both in N2 and air conditions. |
