| 학회 | 한국재료학회 |
| 학술대회 | 2006년 봄 (05/19 ~ 05/20, 경상대학교 ) |
| 권호 | 12권 1호 |
| 발표분야 | 반도체재료 |
| 제목 | I-V Characteristics of Boron Carbide Hetero-structure by PECVD |
| 초록 | Boron is unique amongst the most efficient elements for neutron capture in that it is also able to form a refractory semiconductor - boron carbide. Boron has long been used as a dopant in neutron detecting semiconductor devices, as the neutron capture element in scintillator - based neutron detectors, and in conversion layers to make diodes with neutron detection efficiencies of a few percent. the difficulty in developing boron into more efficient all solid state neutron detectors has been the difficulty in making reliable semiconducting boron-rich materials and diodes. such devices would have applicability in a wide number of harsh conditions; they should be resistant to corrosive, high temperature, and mechanically abrasive environments. Because of the large neutron capture cross section, these materials could potentially be used as devices in radioactive environment as well. The boron carbide thin films were fabricated by PECVD from a single source compound closo-1,2-dicarbadodecarborane (C2B10H12 ; orthocarborane). The substrates were further cleaned by Ar+ bombardment at 300 mTorr, 30W in the vacuum system. Deposition was carried out in a custom designed parallel plate 13.56 MHz radio-frequency plasma enhanced chemical vapor deposition (PECVD) reactor. Ohmic connections were made to n-type Si(111) and boron-carbide(B5C) thin film by silver. X-ray diffraction (XRD), device I-V characteristics measurement, atomic force microscopy (AFM) and transmission electron microscopy (TEM) measurements were employed for film growth and device characterization. |
| 저자 | Donggun Lee1, Daeheum Yeoun2, Samseok Jang1, Seungdo Yang2, Dongjin Byun1 |
| 소속 | 1Dept. of MAt. Sci. Eng., 2Korea Univ. |
| 키워드 | boron; carbide; PECVD |
