| 학회 |
한국재료학회 |
| 학술대회 |
2011년 봄 (05/26 ~ 05/27, 제주 휘닉스 아일랜드) |
| 권호 |
17권 1호 |
| 발표분야 |
B. Nanomaterials and Processing Technology((나노소재기술) |
| 제목 |
Effect of different stacked structures on the characterization of ZnO/p-GaN/Al2O3 based heterojunction Ultra-violet light-emitting diode (UV-LED) |
| 초록 |
ZnO/p-GaN/Al2O3 based ultra violet light emitting diode (UV-LED) was fabricated using different stacked structures such as i-ZnO/p-GaN (a), n-ZnO/ i-ZnO/p-GaN (b), i-ZnO/superlattice 5 periods/20 nm thick-ZnO /p-GaN (c), n-ZnO/superlattice 5 periods/20 nm thick-ZnO /p-GaN (d) and n-ZnO/superlattice 5 periods/50 nm thick-ZnO /p-GaN (e). The 4 µm-thick p-GaN layer was deposited on Al2O3 (0001) substrate by metal organic chemical vapor deposition at 1090 °C. ZnO/Zn0.8Mg0.2O superlattice layer was grown by stacking alternate layers of ZnO and Zn0.8Mg0.2O with laser fluency of 3J/cm2, repetition rate of 5 Hz, substrate temperature of 600 °C. The thickness of ZnO and Zn0.8Mg0.2O were maintained at 3 nm and 15 nm. Effects of different stacked structure on the characterization of UV-LEDs were investigated. X-ray diffraction and transmission electron microscopy results showed that the ZnO/Zn0.8Mg0.2O superlattices were epitaxially grown with an epitaxial orientation relationship of without secondary phase (MgO). Optical study showed that the optical band gap energy and band edge emission were estimated about 3.75 eV and 370 nm. IV-test results showed that the stack type (d) and (e) UV-LED were observed the blue and violet light emission at turn on voltage of 5 V. |
| 저자 |
Saerok Kim1, Mi Na Kang2, Hyun Kee Lee1, Seung Wook Shin2, Jong-Ha Moon1, Jeong Yong Lee2, Jin Hyeok Kim3
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| 소속 |
1Department of Materials Science Engineering, 2Chonnam National Univ., 3Department of Materials Science and Engineering |
| 키워드 |
ZnO; Mg doped ZnO; superlattice; Hetro-junction; UV-LED
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| E-Mail |
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