| 학회 | 한국재료학회 |
| 학술대회 | 2009년 봄 (05/21 ~ 05/22, 무주리조트) |
| 권호 | 15권 1호 |
| 발표분야 | 반도체재료 |
| 제목 | Fabraction and efficiency for n-CdS/p- CuGaSe2 hetrojunction solar cell |
| 초록 | CuGaSe2 (CGS) layers were grown by the hot wall epitaxy method. The optimum temperatures of the substrate and source for growth turned out to be 450 and 610 oC, respectively. Based on the absorption measurement, the band-gap variation of CGS was well interpreted by the Varshni's equation. By analyzing these emissions, a banddiagram of the observed optical transitions was obtained. From the solar cell measurement, an 11.17 % efficiency on the n-CdS/p-CGS junction was achieved. |
| 저자 | 유상하, 홍광준 |
| 소속 | 조선대 |
| 키워드 | CuGaSe2 (CGS) layers; efficiency on the n-CdS/p-CGS junction; solar cell; |
