| 학회 |
한국재료학회 |
| 학술대회 |
2009년 가을 (11/05 ~ 11/06, 포항공과대학교) |
| 권호 |
15권 2호 |
| 발표분야 |
E. Frontiers of Materials Research(선도 재료연구) |
| 제목 |
Excition energy from low-temperature photoluminescence measurement properties for CuGaSe2 layers |
| 초록 |
CuGaSe2 (CGS) layers were grown by the hot wall epitaxy method. The optimum temperatures of substrate and source for the growth turned out to be 450 and 610 oC, respectively. The CGS layers were epitaxially grown along the ＜110＞ direction and kept up the initial mole fraction during the layer growth. Based on the absorption measurement, the band-gap variation of CGS was well interpreted by the Varshni’s equation. But, the band-gap energies at low temperatures were a large value unlike that of other CGS. From the low-temperature photoluminescence experiment, sharp and intensive free- and bound-exciton peaks were observed. By analyzing these emissions, a band diagram of the observed optical transitions was obtained. |
| 저자 |
홍광준 |
| 소속 |
조선대 |
| 키워드 |
CuGaSe2; optimum condition of growth; free excition; bound exciton
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| E-Mail |
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