| 학회 | 한국공업화학회 |
| 학술대회 | 2018년 봄 (05/02 ~ 05/04, 대구 엑스코(EXCO)) |
| 권호 | 22권 1호 |
| 발표분야 | 에너지저장변환_포스터 |
| 제목 | Fabrication of CIGS films by sputtering with Cu, CuGa, In, or Ga2Se3 Target |
| 초록 | CIGS thin films were fabricated by using a two-step process consisting of Cu, CuGa, In or Ga2Se3 stacking procedure and selenization. In the first step, CIGS precursors were deposited on Mo/soda-lime glass by the optional stacking of Cu-In-Ga or Cu-In-Ga-Se based materials followed by evaporation of Se layer. In the second step, the stacked precursors were selenized using a graphite jig at ~ 480 ℃. This simple, rapid and low-loss procedure can be easily applied not only on rigid but also flexible substrates. We investigated the effects of low-temperature process on the morphological, optical, electrical properties of CIGS absorber layers. Acknowledgment This work was supported by Technology Development Program to Solve Climate Changes of the National Research Foundation of Korea (NRF) grant funded by the Ministry of Science & ICT (2016M1A2A2936781) and the DGIST R&D Programs (18-BD-05) of the Ministry of Science & ICT. |
| 저자 | 김영일, 전동환, 양기정, 황대규, 강진규, 김대환 |
| 소속 | DGIST |
| 키워드 | CIGS; sputtering; 2-step process; stacked precursor; selenization |
