| 학회 |
한국재료학회 |
| 학술대회 |
2021년 가을 (11/24 ~ 11/26, 경주 라한호텔) |
| 권호 |
27권 2호 |
| 발표분야 |
C. 에너지 재료 분과 |
| 제목 |
Enhanced Photovoltaic Performance of Cu2ZnSn(S,Se)4 Solar Cells Using Ultrathin CuAlO2 as Intermediate Layer |
| 초록 |
This study demonstrated that the addition of a p-type CuAlO2 (CAO) nanolayer improves the power conversion efficiency (PCE) of sputtered CZTSSe thin film solar cells (TFSCs). The addition of CAO nanolayer before absorber layer shows improved Cu2ZnSn(S,Se)4 (CZTSSe) absorber crystallinity, more compact, larger grain sizes morphology with fewer pinholes. Further, the CZTSSe device with optimum deposition time (154 sec) of CAO nanolayer successfully reduced Mo(S,Se)2 layer thickness from ~50 nm to ~25 nm. The fabricated CZTSSe device with optimized CAO nanolayer exhibits higher shunt resistance (Rsh), and lower series resistance (Rs) which resulted in improved short-circuit current density (Jsc) from 33.48 to 35.40 mA/cm2 compared to the reference device (without CAO nanolayer). The optimized CZTSSe device with CAO nanolayer showed a PCE of 10.54% compared to 9.61% for the reference device (without CAO). This work suggests that a further optimized CAO nanolayer can largely influence the CZTSSe absorber and back electrode interface quality which may further significantly improve the PCE of kesterite CZTSSe TFSCs. |
| 저자 |
Kuldeep Singh Gour1, Prof. Jin Hyeok Kim2
|
| 소속 |
1Chonnam National Univ., 2Chonnam National Univesity |
| 키워드 |
CZTSSe; CuAlO<SUB>2</SUB>; intermediate layer; back-interface; Solar cells; Efficiency |
| E-Mail |
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