| 학회 | 한국재료학회 |
| 학술대회 | 2021년 봄 (05/12 ~ 05/14, 광주 김대중컨벤션센터) |
| 권호 | 27권 1호 |
| 발표분야 | C. 에너지 재료 분과 |
| 제목 | The Influence of Atomic Layer Deposited ZnSnO Buffer Layer Process Condition on the Characteristics of CZTSSe Thin Film Solar Cells |
| 초록 | Choice of suitable n-type buffer layer to form favorable heterojunction is one of the promising criteria to achieve a high performance thin film solar cell (TFSC). Till date, CdS has been used as standard buffer layer for various TFSCs, such as Cu(In,Ga)Se2 (CIGS), CdTe, and Cu2ZnSn(S,Se)4 (CZTSSe) etc. However, the toxic Cd-free alternative buffer layers are always in demand to increase environmental compatibility of such TFSCs. In this regard, atomic layer deposition (ALD) has already been proven as a potential technique to obtain conformal ultrathin pinhole-free deposition of alternative buffer layers. In this work, the application of ALD-ZnSnO (ZTO) buffer layer was investigated for CZTSSe TFSCs. Initially, ZTO films were characterized for variable process conditions. Finally, the performance of the cells was tested with ALD-grown ZTO buffer layer. The highest efficiency of 9.47% was achieved with the VOC = 383 mV, JSC = 39.84 mA/cm2, and FF = 60.9% which corresponding to ~93% of the standard CdS-based solar cells (10.19%). Recently, ~8.6% efficiency of CZTSSe TFSCs with ZTO buffer layer has been reported by L. H. Wong group which is the best Cd-free CZTSSe TFSCs with ZTO buffer layer, till date. In comparison, we had fabricated a cell with a similar level of VOC, but with a higher JSC, that resulted in an efficiency difference of about 0.8%p. The detailed analysis of the influence of process conditions on the device performance will be presented. |
| 저자 | 조재유, 허재영 |
| 소속 | 전남대 |
| 키워드 | CZTSSe; Solar cell; ZnSnO; ALD; Buffer layer |
