| 학회 |
한국재료학회 |
| 학술대회 |
2008년 가을 (11/07 ~ 11/07, 차세대융합기술연구원) |
| 권호 |
14권 2호 |
| 발표분야 |
반도체재료 |
| 제목 |
Effects of Buffer Layer Annealing Time on Hydrothermally-Grown ZnO Nanorods |
| 초록 |
The one-dimensional ZnO nanorods have attracted much attention for their potential applications in nanodevices. Here, the well-aligned ZnO nanorod arrays were fabricated by hydrothermal method. The effects of ZnO buffer layer annealing time on structural and optical properties of hydrothermally-grown ZnO nanorods were mainly investigated in this research. The buffer layer annealing time was varied from 0.5 to 30 min. The buffer layer surface with various annealing time was characterized by atomic force microscope (AFM) and scanning electron microscope (SEM) measurements. X-ray diffraction (XRD) spectra revealed that the hydrothermally grown ZnO was grown along c-axis. Room temperature photoluminescence (PL) spectra showed that the ZnO grown on buffer layer annealed for 2 min had the strongest ultraviolet emission intensity and biggest IUV/IVisible, indicating the highest optical quality. |
| 저자 |
Zhao Xiuqin1, Cho-Rong Kim2, Jae Yeop Lee3, Chang-Mi Shin1, Joo-Hoe Heo2, Jae-Young Leem3, Hyukhyun Ryu1, Ji-Ho Chang2, Hong Chan Lee3, Chang-Sik Son1, Won-Jae Lee2, Woo-Gwang Jung3, Swee Tiam Tan1, Junliang Zhao2, Xiaowei Sun3
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| 소속 |
1Department of Nano Systems Engineering, 2Center for Nano Manufacturing, 3Inje Univ. |
| 키워드 |
buffer layer annealing time; ZnO nanorod; hydrothermal method
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| E-Mail |
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