| 학회 | 한국재료학회 |
| 학술대회 | 2016년 가을 (11/16 ~ 11/18, 경주 현대호텔) |
| 권호 | 22권 2호 |
| 발표분야 | G. 나노/박막 재료 분과 |
| 제목 | Solar cells with tin sulfide absorber layer prepared by metal organic chemical vapor deposition |
| 초록 | Ji-Woon Choi, Seong Gu Kang, Gun Hwan Kim, Chang Wan Lee, Dong Joon Kim, Taek-Mo Chung, Young Kuk Lee* Center for Thin Film Materials, Korea Research Institute of Chemical Technology, 141 Gajeong-Ro, Yuseong-gu, Daejeon 305-600, Korea Tel : +82-42-860-7357, Fax : +82-42-861-4151 E-mail : [email protected] Solar cells with tin sulfide absorber layer prepared by metal organic chemical vapor deposition Tin monosulfide (SnS) is a promising candidate to replace current light absorber layer materials of thin film photovoltaics (TFP). SnS has a band-gap (1.1-1.3 eV) with a high optical absorption coefficient. SnS thin films in this research was prepared by metal organic chemical vapor deposition (MOCVD) from the reaction of Sn(dmamp)2 and H2S gas as the source materials at the deposition temperature of 200-400 ℃. For comparative study, post annealing of SnS thin films was also carried out at 400 ℃ for 1 h under the H2S ambient. Raman spectroscopy and x-ray photoelectron spectroscopy (XPS) results demonstrated that the deposited SnS thin film has pure and mono-crystalline phase. SnS thin film growth as well as structural and physical characterization will be also provided in this presentation. |
| 저자 | 최지운, 이영국, 이창완, 김건환, 정택모, 김동준 |
| 소속 | 한국화학(연) |
| 키워드 | thin film solar cell; tin sulfide; light abosorber |
