| 학회 |
한국재료학회 |
| 학술대회 |
2016년 가을 (11/16 ~ 11/18, 경주 현대호텔) |
| 권호 |
22권 2호 |
| 발표분야 |
G. 나노/박막 재료 분과 |
| 제목 |
Graphene-assisted fabrication and thermoelectric characterization of Bi2Te3 and Sb2Te3 films prepared using plasma-enhanced chemical vapor deposition |
| 초록 |
To fabrication of high quality films we show the effect of graphene substrate on the crystal quality of Bi2Te3 and Sb2Te3 thin films which were grown onto transferred graphene/SiO2/Si substrate. Bi2Te3 and Sb2Te3 films were deposited by using an plasma-enhanced chemical vapor deposition using triisopropyl bismuth, triisopropyl antimony and diisopropyl tellurium, as Bi, Sb and Te precursors, respectively. Argon and hydrogen gas (99.999% in purity), which were controlled using a mass flow controller (MFC), were used as a carrier gas and reactant gas, respectively. While all of the precursors and gases were routed into the process chamber the plasma was turned on with constant power of 20 W. The structural and compositional properties of Bi2Te3 and Sb2Te3 films were characterized using X-ray diffractometry (XRD), field emission scanning electron microscopy (FESEM) and X-ray fluorescence analyzer (XRF). The thermoelectric properties of the thin films have been studied by room-temperature measurement of the Seebeck coefficient, Hall coefficient and electrical resistivity. The two-dimensional growth of the deposited Bi2Te3 and Sb2Te3 films onto transferred monolayer graphene occurred instead of three-dimensional island growth of films directly grown onto a SiO2/Si substrate. This might be a result of small lattice mismatch between telluride hexagonal lattice and hexagonal periodicity of the graphene surface, which allows a smooth surface in comparison with directly grown onto SiO2. In addition, the thermoelectric properties of Bi2Te3/graphene and Sb2Te3/graphene exhibited high hall mobility and power factor |
| 저자 |
Chang Wan Lee1, Gun Hwan Kim2, Mia-A Kang1, Hyungjun Kim2, Young Kuk Lee1
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| 소속 |
1Thin Film Materials Research Group, 2Korea Research Institute of Chemical Technology |
| 키워드 |
<P>bismuth tellurede; antimony telluride; graphene; thermoelectricity; PECVD</P>
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| E-Mail |
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