| 학회 | 한국재료학회 |
| 학술대회 | 2006년 봄 (05/19 ~ 05/20, 경상대학교 ) |
| 권호 | 12권 1호 |
| 발표분야 | 반도체재료 |
| 제목 | Characteristics of ZnO thin film Deposited by Atomic Layer Deposition Method |
| 초록 | The fabrication method of ZnO films including sputtering, pulsed laser deposition, e-beam evaporation, sol-gel method, chemical vapor deposition, and atomic layer deposition (ALD). Among these technologies, ALD performed only by a surface reaction between precursors gas been recognized as a unique fabrication technology by which high quality films with low structural imperfection can be obtained. The process parameters were identified as precursor flow rate, substrate temperature. The vaporization temperature of the Zn(C5H5)2 (DEZ) was 20℃, and Ar gas was used as carrier gas for the DEZ delivery. Ar also was used as purge gas and pursing time was fixed at 3s. The DEZ pulse times were varied among 1s, 5s and 10s, and H2O oxidant pulse time was fixed at 2s. Sapphire was used as substrate. The ZnO thin film was deposited at substrate temperature range from 100℃ to 250℃. The deposited film was measured by ellipsometry, and the preferred growth direction and crystal structure were examined by XRD. The film compositions (O/Zn ratio) were investigated by Rutherford Backscattering Spectroscopy. The carrier-type, concentrations and electron mobility were measured using a Hall measurement at room temperature. And the surface roughness of the films was measured by atomic force microscopy. |
| 저자 | Jae-Sung Hur1, Chang-Sik Son2, Jeong-Seop Lee3, Byoung-Hoon Lee4, Jung-Bin Song1, Dong Gun Lee2, Sam Seok Jang1, Dongjin Byun2, Jong-Hyeob Baek1, In-Hoon Choi2 |
| 소속 | 1Department of Materials Science and Engineering, 2Korea Univ., 3Department of Photonics, 4Silla Univ. |
| 키워드 | ALD; ZnO |
