| 학회 |
한국재료학회 |
| 학술대회 |
2015년 봄 (05/14 ~ 05/15, 구미코) |
| 권호 |
21권 1호 |
| 발표분야 |
C. 에너지 재료 |
| 제목 |
Effect of sulfurization conditions on the characterization of Cu2ZnSnS4 thin films. |
| 초록 |
We present an optimization of the heat treatment process as applied to high efficiency Cu2ZnSnS4 thin film solar cells (TFSCs). Specifically, we investigated effect of annealing treatment and time and the amount of sulfur source. The sulfurizations of DC sputtered precursor film have been carried out using RTA system in a graphite box with Sulfur powder. The first condition is the annealing temperature and the second is the amount of sulfur source, the third heat treatment time. Presented a 580℃-10 minutes heat treatment process the optimum condition and the sulfur source is 0.03g. The best cell efficiency of 5.77 % for CZTS TFSC has reported for CdS buffer layer thickness of 80 nm. Effects of sulfurization conditions such as amount of Sulfur powder, reaction time, and temperature on the properties of MoS2 interfacial layers and CZTS thin films were investigated using X-ray diffraction patterns, transmission electron microscopy, field emission scanning electron microscopy, and Raman spectra, respectively. |
| 저자 |
Chang woo Hong1, K.V. Gurava2, Mahesh P. Suryawanshi3, Mahesh P. Suryawanshi1, Jae Ho Yun2, Jong-Ha Moon3, Jin Hyoek Kim1
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| 소속 |
1Optoelectronics Convergence Research Center, 2Department of Materials Science and Engineering, 3Chonnam National Univ. |
| 키워드 |
<P>Cu<SUB>2</SUB>ZnSnS<SUB>4</SUB>; Sulfurization; sputtering; thin films solar cell</P>
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| E-Mail |
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