| 학회 | 한국재료학회 |
| 학술대회 | 2021년 가을 (11/24 ~ 11/26, 경주 라한호텔) |
| 권호 | 27권 2호 |
| 발표분야 | A. 전자/반도체 재료 분과 |
| 제목 | Wet chemical etching properties of Transparent Indium Zinc Tin Oxide thin films grown by magnetron sputtering mathod |
| 초록 | Recently, oxide-based thin film transistors (TFTs) have attracted much attention for display applications due to high mobility, high optical transparency and low processing temperature. Amorphous metal oxides allow for controllable conductivity, which permits it to be used both as a transparent semiconductor or conductor, and so to be used both as active and source/drain layers in TFTs. The mobility and carrier concentration of IZTO thin films are primarily related with oxygen vacancies and can be controlled by oxygen partial pressure during sputter deposition. In order to realize IZTO-based transparent display devices, development and understanding of the IZTO etching process are essential. In general, the wet etching process is simpler than the dry etching process, and provides a high throughput and low coat. Therefore, wet etching has been used to pattern thin films in display manufacturing. In this study, we have fabricated the electrical and optical properties of the IZTO thin films grown on a poly ethylene naphthalate (PEN) substrate, as a function of RF power, working pressure and oxygen partial pressure using RF magnetron sputtering system at room temperature and investigated their wet chemical etching characteristics. |
| 저자 | Sung Hun Lee, Hanjae Shin, Sang Bong Byun, Yong An Jung, Soo Hyun Cho, Dongcheul Han |
| 소속 | Gumi Electronics & Information Technology Research Institute |
| 키워드 | wet chemical etching; poly ethylene naphthala; Transparent Indium Zinc Tin Oxide |
