| 학회 |
한국고분자학회 |
| 학술대회 |
2011년 가을 (10/06 ~ 10/07, 김대중 컨벤션센터) |
| 권호 |
36권 2호 |
| 발표분야 |
기능성고분자－막분리용 고분자 |
| 제목 |
Top surface imaging process by selective chemisorption of diphenyl siloxane derivatives. |
| 초록 |
A new top surface imaging process has been developed in which a silicon-containing compound is adsorbed selectively on a patternwise exposed non-chemically amplified resist film. This approach offers a higher resolution because of the anisotropic pattern transfer of a thin imaging resist film containing silicon into the underlying polymer film. Upon irradiation in the deep UV, the polymer containing diazoketo groups become hydrophilic by the formation of carboxylic groups. An amine-functionalized diphenylsiloxane oligomer was chemisorbed using EDC/NHS coupling chemistry over the UV light-exposed regions of a diazoketo-functionalized photoresist surface. The chemisorbed diphenylsiloxane oligomer acts as the etch barrier during the subsequent O2-RIE process to generate patterns. In this system, we could avoid the problems of chemically amplified resists system and take the advantages of top surface imaging. |
| 저자 |
김현희1, 우승아2, 김진백2
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| 소속 |
1한국과학기술원, 2한국 과학기술원 |
| 키워드 |
top surface imaging; diphenyl siloxane derivatives; non-chemically amplified resist; chemisorption
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| E-Mail |
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