| 학회 |
한국재료학회 |
| 학술대회 |
2009년 봄 (05/21 ~ 05/22, 무주리조트) |
| 권호 |
15권 1호 |
| 발표분야 |
반도체재료 |
| 제목 |
Synthesis of IGO thin film by using solution deposition method in low temperature |
| 초록 |
Indium gallium oxide thin films with different annealing temperature and indium ratio were prepared on si(1000 Å) wafer by the solution deposition method. As annealing temperature increases, the mobility of TFTs increases before annealing temperature at 500 ℃. The mobility of TFTs was changed by indium ratio. The maximum value of mobility, ~19.5 cm2/v∙s, was obtained by annealing at 500 ℃. The mobility of low temperature, ~0.34 cm2/v∙s, was obtained by annealing at 300 ℃. The On-to-off current ratios were ＞106. The average of transmittances with different indium ratio was 98 %. The optical band gap of the films was varied with increasing gallium content from 3.83 eV to 4.70 eV. |
| 저자 |
배은진1, 한승열2, 류시옥1, Chih-Hung Chang2
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| 소속 |
1영남대, 2오레곤 주립 대 |
| 키워드 |
IGO thin film; solution deposition method; low temperature
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| E-Mail |
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